features ? high voltage operation : vds=28v ? high power : p1db=40dbm(typ.) at f=2.17ghz ? high gain: g1db=14db(typ.) at f=2.17ghz ? broad frequency range : 2100 to 2200mhz ? proven reliability description the FLL21E010MK is a high power gaas fet that offers high efficiency, ease of matching, greater consis tency and broad bandwidth for high power l-band amplifiers. this device is targeted for high voltage, low current operation in digitally modul ated amplification. this product is ideally suited for w-cdma and multi- carrier pcs base station amplifiers while offering high gain, long term reliability and ease of use. absolute maximum ratings item symbol condition rating unit drain-source voltage v ds 32 v gate-source voltage v gs tc=25 o c -3 v total power dissipation p t 41.5 w storage temperature t stg -65 to +175 o c channel temperature t ch 200 o c electrical character istics (case temperature tc=25 o c) item symbol condition limit unit min. typ. max. pinch-off voltage v p v ds =5v i ds =1.5ma -0.1 -0.2 -0.5 v gate-source breakdown voltage v gso i gs =-15 a -5 - - v output power at 1db g.c.p. p1db v ds =28v f=2.17ghz 39.0 40.0 - dbm power gain at 1db g.c.p. g 1db i ds(dc) =125ma 13.0 14.0 - db drain efficiency d - 40 - % thermal resistance r th channel to case - 3.1 3.6 o c/w g.c.p.:gain compression point edition 1.3 mar 2004 1 recommended operating condition (case temperature tc=25 o c) item symbol condition limit unit dc input voltage v ds <28 v forward gate current i gf r g =50 ? <47 ma reverse gate current i gr r g =50 ? >-2.5 ma channel temperature t ch 155 o c FLL21E010MK high voltage - high power gaas fet
FLL21E010MK high voltage - high power gaas fet 2 output power & drain efficiency vs. input power @v ds =28v i ds =125ma f=2.17ghz two-carrier imd(aclr) & drain efficiency vs. output power @v ds =28v i ds =125ma fo=2.1325ghz f1=2.1475ghz w-cdma 3-gpp bs-1 64ch modulation single-carrier aclr & drain efficiency vs. output power @v ds =28v i ds =125ma f=2.1325ghz w-cdma 3gpp bs-1 64ch modulation 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 10 12 14 16 18 20 22 24 26 28 30 input pow er [dbm] output power [dbm] 0 10 20 30 40 50 60 70 80 drain efficiency [%] pout drain efficiency -60 -55 -50 -45 -40 -35 -30 -25 24 26 28 30 32 34 36 output pow e r [dbm ] imd [dbc] 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 drain efficiency [%] im3 im5 drain efficiency -60 -55 -50 -45 -40 -35 -30 -25 24 26 28 30 32 34 36 output pow er [dbm] alcr [dbc] 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 drain efficiency [%] +/-5m hz +/-10mhz drain efficiency
FLL21E010MK s-parameters @v ds =28v i ds =300ma f=0.5 to 5.0 ghz s11 s22 0.5g h z 25 50 1.0 4.0 2.0 3.0 0.5g h z 5.0 1.0 2.0 3.0 4.0 5.0 0 +10j +25j +50j +100j +250j -10j -25j -50j -100j -250j 100 10 s12 s21 0.4 0.3 8 0. 5g h z 1.0 4 2. 0 3 5 180 0 -90 +90 scale for |s 21 | scale for | s 12 | 6 !freq(ghz ) s11(mag) s11(ang) s21(mag) s21(ang) s12(mag) s12(ang) s22(mag) s22(ang) 0.1 0.958 -120.1 38.897 110.3 0.005 17.9 0.226 -81.4 0.2 0.948 -148.0 20.943 88.1 0.005 -1.4 0.291 -101.0 0.3 0.945 -158.9 13.801 74.6 0.005 -11.9 0.375 -111.0 0.4 0.946 -164.3 9.953 64.0 0.004 -12.0 0.459 -119.0 0.5 0.945 -167.8 7.598 55.3 0.004 -7.9 0.531 -125.8 1 0.956 -175.7 2.880 24.4 0.002 29.6 0.756 -150.1 1.1 0.953 -176.5 2.487 19.5 0.002 32.1 0.778 -153.5 1.2 0.955 -177.5 2.153 15.5 0.002 52.9 0.806 -156.5 1.3 0.956 -177.9 1.906 11.7 0.003 50.6 0.826 -159.6 1.4 0.954 -178.8 1.688 7.8 0.003 60.6 0.839 -162.2 1.5 0.956 -179.6 1.526 4.5 0.005 65.7 0.854 -164.2 1.6 0.952 -179.7 1.391 1.3 0.004 61.6 0.869 -166.4 1.7 0.955 179.8 1.255 -1.7 0.004 74.9 0.873 -168.7 1.8 0.955 178.8 1.154 -4.5 0.006 80.3 0.879 -170.1 1.9 0.959 178.3 1.070 -7.3 0.006 73.5 0.889 -172.1 1.95 0.953 178.1 1.023 -9.2 0.007 80.8 0.888 -173.0 2 0.956 177.8 0.984 -9.9 0.007 77.8 0.890 -173.7 2.05 0.960 177.6 0.961 -11.6 0.007 77.2 0.897 -174.2 2.1 0.952 177.4 0.920 -13.1 0.008 71.8 0.902 -175.1 2.11 0.959 177.2 0.920 -13.4 0.007 79.5 0.899 -175.5 2.12 0.960 177.5 0.910 -13.5 0.007 76.2 0.901 -175.5 2.13 0.957 176.9 0.908 -13.9 0.008 74.8 0.906 -175.7 2.14 0.958 177.1 0.902 -13.4 0.011 61.1 0.900 -175.8 2.15 0.955 176.9 0.891 -14.4 0.008 74.9 0.905 -176.0 2.16 0.952 176.7 0.889 -15.2 0.007 74.5 0.904 -176.3 2.17 0.957 176.8 0.878 -14.8 0.007 79.2 0.910 -176.5 2.18 0.959 176.8 0.873 -15.0 0.008 69.0 0.905 -176.6 2.19 0.961 176.7 0.869 -15.2 0.007 72.9 0.906 -176.5 2.2 0.954 176.5 0.855 -15.9 0.007 77.2 0.904 -177.0 2.25 0.956 176.7 0.832 -16.7 0.007 78.7 0.909 -177.4 2.3 0.953 175.9 0.810 -17.5 0.008 74.9 0.909 -178.0 2.35 0.956 175.4 0.784 -19.7 0.009 80.0 0.920 -178.4 2.4 0.958 175.4 0.771 -20.7 0.009 75.0 0.919 -179.3 2.5 0.950 174.6 0.731 -22.7 0.010 75.0 0.920 179.5 2.6 0.951 174.0 0.701 -25.0 0.011 78.1 0.922 178.6 2.7 0.947 173.6 0.673 -27.7 0.012 74.2 0.931 177.0 2.8 0.953 172.5 0.652 -30.1 0.011 75.5 0.924 175.7 2.9 0.944 171.6 0.635 -33.1 0.013 74.0 0.927 174.9 3 0.949 170.8 0.609 -35.5 0.014 70.5 0.930 173.5
FLL21E010MK high voltage - high power gaas fet board layout r=10.45 t=1.2mm ? 16v/10 f ?
FLL21E010MK high voltage - high power gaas fet
FLL21E010MK high voltage - high power gaas fet for further information please contact : eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.us.eudyna.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 caution eudyna devices inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ? do not put these products into the mouth. ? do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by- products are dangerous to the human body if inhaled, ingested, or swallowed. ? observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. eudyna devices asia pte. ltd. hong kong branch rm.1101,ocean centre, 5 canton road tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. 1000 kamisukiahara, showa-cho nakakomagun, yamanashi 409-3883, japan (kokubo industrial park) tel +81-55-275-4411 fax +81-55-275-9461 sales division 1, kanai-cho, sakae-ku yokohama,244-0845,japan tel +81-45-853-8156 fax +81-45-853-8170 eudyna devices inc. reserves the right to change products and specifications without notice.the information does not convey any license under rights of eudyna devices inc. or others. ? 2004 eudyna devices usa inc. printed in u.s.a.
